Reduced blue shift in screening the quantum-confined stark effect of an InGaN/GaN quantum well with the prestrained growth of a light-emitting diode

Author

Lu, Chih-Feng ; Huang, Chi-Feng ; Yang, C.C.

Author_Institution

Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We demonstrate the reduced spectral blue shift in increasing injection current of an InGaN/GaN quantum-well light-emitting diode with prestrained growth and show that this effect is stronger when the prestained GaN barrier layer is thinner.

Keywords

III-V semiconductors; MOCVD; Stark effect; charge injection; gallium compounds; hole density; indium compounds; light emitting diodes; localised states; quantum well devices; semiconductor growth; semiconductor quantum wells; spectral line shift; InGaN-GaN; carrier localization; hole distribution; injection current; metalorganic chemical vapor deposition; quantum-confined Stark effect; quantum-well light-emitting diode; reduced spectral blue shift; Current; Gallium nitride; Indium; Lattices; Light emitting diodes; Optical devices; Photonics; Quantum well devices; Radiative recombination; Stark effect; 230.3670 Light-emitting diodes; 230.5590 Quantum-well devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572316