Scaling of low-frequency noise in resistive FET mixers

Author

Margraf, Michael ; Boeck, Georg

Author_Institution

Berlin Univ. of Technol., Germany

Volume

2

fYear

2003

fDate

20-23 Sept. 2003

Firstpage

873

Abstract

The low-frequency noise in resistive FET mixers is investigated. The origin and the mechanism of creation are described using simplified equivalent circuits. Measurements on a single-ended mixer, as well as idealized simulations and formulas show the influence of LO frequency and gate width. The results confirm the previously proposed existence of two noise sources: FET channel and intrinsic gate load resistance. Furthermore, they prove that low-frequency noise increases rapidly with increasing LO frequency (+40dB/decade). The dependence on FET gate width is about +30dB/decade for the channel noise and about +10dB/decade for the noise of gate resistors.

Keywords

circuit noise; field effect transistor circuits; microwave mixers; network analysis; semiconductor device noise; FET channel noise source; FET gate width; LO frequency; intrinsic gate load resistance noise; low-frequency noise scaling; resistive FET mixers; single-ended mixer; 1f noise; Active noise reduction; Circuit noise; Equivalent circuits; FETs; Low-frequency noise; Radio frequency; Resistors; Semiconductor device noise; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International

Print_ISBN

0-7803-7824-5

Type

conf

DOI

10.1109/IMOC.2003.1242695

Filename

1242695