• DocumentCode
    2256347
  • Title

    A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology

  • Author

    Calligaro, Cristiano ; Liberali, Valentino ; Stabile, Alberto ; Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro

  • Author_Institution
    RedCat Devices srl, Milan, Italy
  • fYear
    2010
  • fDate
    19-22 Dec. 2010
  • Firstpage
    375
  • Lastpage
    378
  • Abstract
    This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.
  • Keywords
    CMOS memory circuits; SRAM chips; radiation hardening (electronics); CMOS technology; RHBD techniques; SRAM; nuclear physics; radiation hardened; CMOS integrated circuits; CMOS technology; Protons; Prototypes; Radiation hardening; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2010 International Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-61284-149-6
  • Type

    conf

  • DOI
    10.1109/ICM.2010.5696165
  • Filename
    5696165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256347