A closed-form thermal noise model of SOI MOSFETs for low noise application

Author

Guoyan, Zhang ; Huailin, Liao ; Ru, Huang ; Chan, Mansun ; Xing, Zhang ; Yangyuan, Wang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2001

fDate

2001

Firstpage

130

Lastpage

133

Abstract

The authors present a closed-form thermal noise model by incorporating the energy transport theory for SOI MOSFETs. This incorporation easily solves the problems facing the present noise models and presents an accurate and analytical thermal noise expression. Meanwhile, a minimum noise value at a certain drain current (I_opt) can be analytically calculated with this model, which is very crucial for the design of low-noise IC such as low noise amplifiers (LNA). Due to its simplicity, the model can be easily implemented into existing circuit simulators such as SPICE

Keywords

MOSFET; SPICE; amplifiers; digital simulation; semiconductor device models; silicon-on-insulator; thermal noise; SOI MOSFET; SPICE; Si-SiO₂; circuit simulators; closed-form thermal noise model; drain current; energy transport theory; low noise amplifiers; low noise application; minimum noise value; Circuit noise; Electrons; Integrated circuit modeling; Integrated circuit noise; Lattices; MOSFET circuits; Noise level; Power MOSFET; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984456

Filename

984456