DocumentCode
2256382
Title
Conduction mechanisms for off-state leakage of poly-Si thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
Author
Lin, Horng-Chih ; Yu, Michael ; Chen, Guo-Hua ; Huang, Tiao-Yuan ; Tan-Fu Le
Author_Institution
Nat. Nano Device Labs., Taiwan
fYear
2001
fDate
2001
Firstpage
134
Lastpage
137
Abstract
We have recently (2001) proposed a new field-induction-drain (FID) structure with a bottom sub-gate, which would make the manufacturing process more flexible. However, detailed characterization on the leakage characteristics of such bottom sub-gate devices is still lacking. We therefore carried out this study to explore this issue by fabricating and characterizing both n- and p-channel TFTs with bottom sub-gate
Keywords
elemental semiconductors; silicon; thin film transistors; FID TFT; Si; bottom sub-gate; field-induction-drain; leakage characteristics; off-state leakage; thin-film transistors; Chemical vapor deposition; Degradation; Implants; Leakage current; Manufacturing processes; Plasma measurements; Region 6; Silicon; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984457
Filename
984457
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