Title :
A 1.9 GHz CMOS class E power amplifier with +29 dBm output power and 58% PAE
Author :
Tawfik, Shadi ; Tong, Tian ; Nielsen, Troels S. ; Larsen, Torben
Author_Institution :
Center for Telelnfrastructure, Aalborg Univ., Denmark
fDate :
28 Aug.-2 Sept. 2005
Abstract :
This paper investigates the feasibility of designing a high power, high efficiency class E power amplifier fully integrated in CMOS and accordingly presents the design of a 1.9 GHz two-stage class E power amplifier in a standard 0.25 μm CMOS technology. Excluding the final output matching network, all passives of interstage and input matching networks are on-chip components. Working with a 2.5 V supply, the amplifier achieves a simulated 4-29 dBm output power with 58% PAE. With a suitable linearization scheme, the power amplifier can be used in a UMTS transmitter.
Keywords :
CMOS integrated circuits; UHF power amplifiers; 0.25 micron; 1.9 GHz; 2.5 V; CMOS power amplifier; UMTS transmitter; class E power amplifier; input matching networks; interstage networks; linearization scheme; 3G mobile communication; CMOS technology; High power amplifiers; Impedance matching; Network-on-a-chip; Power amplifiers; Power generation; Switches; Transceivers; Transmitters;
Conference_Titel :
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN :
0-7803-9066-0
DOI :
10.1109/ECCTD.2005.1522916
