Title :
I-V characteristics of polarization-induced barriers in AlGaN/GaN heterostructures
Author :
Jia, L. ; Keogh, D. ; Yu, L.S. ; Lau, S.S. ; Yu, E.T. ; Asbeck, P.M. ; Miraglia, P. ; Roskowski, A. ; Davis, R.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
I-V characteristics of the GaN/AlGaN/GaN heterostructures show that the barrier behaves like a Schottky barrier with controllable barrier height. Low temperature I-V measurement shows that a defect-assisted tunneling mechanism may dominate the current transport across the barrier
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; semiconductor heterojunctions; tunnelling; wide band gap semiconductors; GaN-AlGaN-GaN; GaN/AlGaN/GaN heterostructures; I-V characteristics; Schottky barrier; controllable barrier height; current transport; defect-assisted tunneling mechanism; polarization-induced barriers; Aluminum gallium nitride; Conducting materials; Dielectric constant; Electrons; Energy barrier; Gallium nitride; Microwave transistors; Optical polarization; Power engineering and energy; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984475
