Title :
Characterization of interface traps in subthreshold regions of implanted 6H- and 4H-SiC MOSFETs
Author :
Zheng, Yu ; Softic, Amela ; White, Marvin H.
Author_Institution :
Sherman Fairchild Center for Solid State Studies, Lehigh Univ., Bethlehem, PA, USA
Abstract :
In this paper the interface trap densities (Dit) of 6H- and 4H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (ET) from the transfer characteristics. We show these interface trap densities increase exponentially approaching the onset of strong inversion for both polytypes, and Dit(ET ) is higher in 4H than in 6H through the subthreshold region. These results are consistent with previous reports
Keywords :
MIS structures; MOSFET; electron traps; interface states; polymorphism; silicon compounds; wide band gap semiconductors; 4H-SiC; 6H-SiC; MOSFET; SiC; interface trap density; polytypes; strong inversion; subthreshold region; transfer characteristics; trap energy; Capacitance measurement; Capacitance-voltage characteristics; Density measurement; Doping; Fabrication; Hall effect; MOS devices; MOSFETs; Silicon carbide; Wideband;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984478
