Pt-Ga ohmic contacts to n-ZnO using focused ion beams

Author

Inumpudi, Aravind ; Iliadis, Agis A. ; Krishnamoorthy, Soumya ; Choopun, Supab ; Vispute, R.D. ; Venkatesan, Thirumalai

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

fYear

2001

fDate

2001

Firstpage

220

Lastpage

223

Abstract

High quality Pt ohmic contacts on unintentionally doped n-type ZnO epitaxial layers, grown by pulsed laser deposition, are reported. The contacts were formed by using Ga focused ion beam surface-modification and Pt direct-write metal deposition. Contact resistance values, measured by the transmission line method, produced values as low as 3×10^-4 Ωcm² without any annealing. An optimum surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through a Ga-ZnO thin surface layer

Keywords

II-VI semiconductors; contact resistance; focused ion beam technology; gallium; metallisation; ohmic contacts; platinum; surface treatment; tunnelling; wide band gap semiconductors; zinc compounds; Ga focused ion beam surface modification; Ga-ZnO thin surface layer; Pt direct-write metal deposition; Pt-Ga ohmic contacts; ZnO-Ga-Pt; contact resistance; current transport mechanism; n-ZnO epitaxial layers; optimum surface-modification dosage window; transmission line method; tunneling; Contact resistance; Electrical resistance measurement; Epitaxial layers; Ion beams; Ohmic contacts; Optical pulses; Pulsed laser deposition; Surface resistance; Transmission line measurements; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984480

Filename

984480