Title :
A novel high power bipolar transistor in 4H-SiC
Author :
Zhao, J.H. ; Li, X. ; Fursin, L. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.
Author_Institution :
ECE Dept., Rutgers Univ., Piscataway, NJ, USA
Abstract :
A novel high voltage normally-off field gated bipolar transistor (FGBT) in 4H-SiC is proposed. The DC and transient characteristics of this device are investigated by performing 2D numerical simulations using the ISE SiC TCAD module
Keywords :
bipolar transistor switches; digital simulation; power bipolar transistors; semiconductor device models; silicon compounds; technology CAD (electronics); wide band gap semiconductors; 2D numerical simulation; 4H-SiC; DC characteristics; ISE SiC TCAD module; SiC; high power bipolar transistor; high voltage normally-off field gated bipolar transistor; power switches; transient characteristics; Bipolar transistors; Charge carrier lifetime; Current density; Electronics industry; Leakage current; Material properties; Power electronics; Silicon carbide; Temperature distribution; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984483
