Plasma deposited N-doped a-SiC:H films: characterization

Author

Huran, J. ; Hotovy, I. ; Kobzev, Alexander P. ; Balalykin, N.I.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia

fYear

2002

fDate

30 June-5 July 2002

Firstpage

114

Lastpage

117

Abstract

We present the properties of nitrogen-doped amorphous silicon carbide films that were grown by PECVD technique and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH₃ into the gas mixture of silane SiH₄ and methane CH₄, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.

Keywords

Rutherford backscattering; amorphous semiconductors; electron beam effects; hydrogen; nitrogen; plasma CVD coatings; semiconductor diodes; semiconductor thin films; silicon compounds; wide band gap semiconductors; CVD; N doped SiC:H films; PECVD; RBS spectra; Si; SiC:H,N; ammonia; annealing; carbon; current voltage characteristics; diodes; irradiation; methane; nitrogen; nitrogen doped amorphous silicon carbide films; plasma deposition; pulsed electron beam; silane; silicon substrates; Annealing; Dielectric substrates; Electrodes; Electron beams; Frequency; Nitrogen; Plasma temperature; Semiconductor diodes; Semiconductor films; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on

Print_ISBN

0-7803-7418-5

Type

conf

DOI

10.1109/SIM.2002.1242737

Filename

1242737