Title :
Ultrafast dynamics of semiconductor interband transitions in THz fields up to 4 MV/cm
Author :
Junginger, F. ; Schubert, O. ; Schmidt, C. ; Mährlein, S. ; Mayer, B. ; Sell, A. ; Huber, R. ; Leitenstorfer, A.
Author_Institution :
Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
Abstract :
Phase-locked multi-THz transients bias semiconductors far above the usual threshold for dielectric breakdown. Few-cycle NIR pulses synchronized to the THz transients on an as-timescale, probe interband transitions under electric fields of 4 MV/cm.
Keywords :
electric breakdown; high-speed optical techniques; nonlinear optics; optical phase locked loops; electric fields; few-cycle NIR pulses; phase-locked multi-THz transients bias semiconductors dielectric breakdown; probe interband transitions; semiconductor interband transitions; ultrafast dynamics; Electric fields; Frequency modulation; Indium phosphide; Nonlinear optics; Optimized production technology; Probes; Transient analysis;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
