Title :
Precise tuning of the switching field in ´implantation patterned´ Co/Pt multilayers
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Chicago, IL
Abstract :
[Co4/Pt10]n multilayers with strong out-of-plane magnetic anisotropy were fabricated by magnetron sputtering for Pt and e-beam deposition for Co on a Si/SiO2 substrate with a 100 Å Pt buffer layer in UHV. The patterning of submicron periodic arrays was done using 30 keV He ion implantation. The technique provides an excellent opportunity for precise tuning of the switching field in ´implantation patterned´ Co/Pt by controlling the distance between irradiated areas and by controlling the irradiation dose. The results of systematic characterization of arrays for different doses ranging from 1015 to 5×1016 ions/cm are presented
Keywords :
arrays; cobalt; electron beam deposition; ion implantation; magnetic anisotropy; magnetic domains; magnetic hysteresis; magnetic multilayers; magnetic switching; platinum; sputter deposition; 100 A; 30 keV; Co-Pt; He ion implantation; Pt buffer layer; Si; Si-SiO2; Si/SiO2 substrate; e-beam deposition; hysteresis loops; implantation patterned Co/Pt multilayers; irradiation dose control; magnetic domains; magneto-optical images; magnetron sputtering; out-of-plane magnetic anisotropy; submicron periodic arrays; switching field tuning; Helium; Magnetic anisotropy; Magnetic domains; Magnetic films; Magnetic materials; Magnetic multilayers; Materials science and technology; Nonhomogeneous media; Optical films; Perpendicular magnetic anisotropy;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984507
