Title :
Roadmap of the Flash Memory
Author :
Shirota, Riichiro
Author_Institution :
Toshiba, Japan
Abstract :
It has become 19 years, since the development of the NAND Flash started using 0.7..m rule in 1987. The speed of the scaling has been very fast and the period of the product of the new generation is less than 2 years. Now, design rule of the NAND Flash memory has become less than 70nm. There are some problems to interfere with the scaling of the memory cell. Basic idea to overcome these problems will be introduced in this talk.
Keywords :
Biographies; Flash memory; Large-scale systems; Speech;
Conference_Titel :
Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7695-2572-5
DOI :
10.1109/MTDT.2006.27
