Title :
A low energy drive for high power 300 A-1000 V IGBT
Author :
Jaafari, Alain ; Bergogne, Dominique ; Picarfd, J.-P.
Author_Institution :
Univ. Blaise Pascal, Aubiere, France
Abstract :
An insulated-gate bipolar transistor gate driver circuit that requires few components, is easy to implement, is totally insulated and performs well over the range of 10 Hz to 600 kHz is described. It is shown that the reduction of driver power consumption results in a reduction of the power supplies and that the low component number and the reduced transformer provide a very compact circuit, making integration possible. The circuit performance and operation are discussed.<>
Keywords :
driver circuits; insulated gate bipolar transistors; 10 Hz to 600 kHz; 1000 V; 300 A; IGBT; circuit operation; circuit performance; driver circuit; power consumption; Driver circuits; Frequency; Galvanizing; Inductance; Insulated gate bipolar transistors; Power transformer insulation; Pulse transformers; RLC circuits; Resonance; Switches;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152298
