Title :
A broadband GaN push-pull distributed microwave power amplifier
Author :
Lee, Jong-Wook ; Green, Bruce M. ; Tilak, Vinny ; Lee, Sungjae ; Shealy, James R. ; Eastman, Lester F. ; Webb, Kevin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We have demonstrated a broadband GaN push-pull amplifier that used two 1.5 mm AlGaN/GaN HEMTs and a new balun. The balun structure is based on the compensation approach suggested by Marchand, which is preferred for low loss, broadband, and high frequency operation
Keywords :
III-V semiconductors; baluns; differential amplifiers; distributed amplifiers; gallium compounds; high electron mobility transistors; microwave power amplifiers; wideband amplifiers; GaN; HEMT; balun structure; broadband push-pull distributed microwave power amplifier; compensation approach; high frequency operation; low loss operation; Aluminum gallium nitride; Broadband amplifiers; Distributed amplifiers; Frequency; Gallium nitride; HEMTs; Impedance matching; MODFETs; Microwave amplifiers; Power amplifiers;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984526
