Title :
Comparison of electrical and reliability characteristics of different tunnel oxides in SONOS flash memory
Author :
Wu, Jia-Lin ; Chien, Hua-Ching ; Liao, Chien-Wei ; Wu, Cheng-Yen ; Lee, Chih-Yuan ; Wei, Houng-Chi ; Chen, Shih-Hsien ; Hwang, Hann-Ping ; Pittikoun, Saysamone ; Cho, Travis ; Kao, Chin-Hsing
Author_Institution :
Chung-Cheng Inst. of Technol., Nat. Defense Univ., Taoyuan
Abstract :
The characteristics of polysilicon-oxide-nitride-oxide-silicon (SONOS) devices with different tunnel oxides are studied. The tunnel oxide fabricated by high-temperature oxide (HTO) with additional NO annealing treatment (HTO (NO*)) has better performance than that fabricated by HTO only and in-situ steam generated oxide (ISSG) including operation window, retention, and endurance. Besides, the properties of charge-to-breakdown are also observed. The study can provide a straightforward way of reliability for future flash memory application
Keywords :
annealing; flash memories; integrated circuit reliability; semiconductor-insulator-semiconductor devices; SONOS flash memory; annealing treatment; electrical characteristics; high-temperature oxide; in-situ steam generated oxide; polysilicon-oxide-nitride-oxide-silicon devices; reliability characteristics; tunnel oxides; Annealing; CMOS technology; Dielectric substrates; EPROM; Flash memory; Leakage current; Nitrogen; Nonvolatile memory; SONOS devices; Testing;
Conference_Titel :
Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
Conference_Location :
Taipei
Print_ISBN :
0-7695-2572-5
DOI :
10.1109/MTDT.2006.8
