Title :
A high-efficiency power MOSFET used as the control element in an 800-volt switch
Author :
Severns, Rudy ; Cogan, Adrian ; Fortier, Tim
Author_Institution :
Springtime Enterprises
fDate :
April 28 1986-1986
Abstract :
The advantages of a new generation of lowvoltage, dense geometry (1.6 million cells /in.2) power MOSFETs for switching applications is discussed. These devices provide a factor of two lower on-resistance per unit area with a substantial reduction in capacitance. An emitterswitched high-voltage BJT is used as a design example. The discussion on emitter open switching will bring to light several new aspects of this type of BJT operation.
Keywords :
Capacitance; Impedance; Integrated circuits; Limiting; MOSFET; Switches; Temperature;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1986 IEEE
Conference_Location :
New Orleans, Louisiana, USA
DOI :
10.1109/APEC.1986.7073308
