Title :
Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system
Author :
Vogiatzis, Nikolaos ; Rorison, Judy M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., Bristol
Abstract :
Using self energy calculations we present an improved band-anti crossing model with regards to the perturbed extended and localized states, based on the many impurity Anderson model. We also derive the perturbed density of states.
Keywords :
Anderson model; III-V semiconductors; electronic density of states; gallium arsenide; indium compounds; nitrogen compounds; GaInNAs; band-anti crossing model; impurity Anderson model; localized states; material system; perturbed density of states; self energy calculations; Atom optics; Atomic measurements; Effective mass; Green´s function methods; Nitrogen; Optical scattering; Photovoltaic cells; Power engineering and energy; Semiconductor impurities; Semiconductor materials; 160.6000 (Semiconductor Materials); 290.5825 (Scattering theory);
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
