Title :
Human Body Model ESD protection concepts in SOI and bulk CMOS at the 130 nm node
Author :
Putnam, C. ; Gauthier, R. ; Muhammad, M. ; Chatty, K. ; Woo, M.
Author_Institution :
Microelectron. Semicond. Res. & Dev. Center, IBM, Essex Junction, VT, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we compare and contrast positive mode Human Body Model (HBM) ESD protection solutions between bulk and SOI in the 130nm technology node.
Keywords :
CMOS integrated circuits; electrostatic discharge; elemental semiconductors; field effect transistors; integrated circuit reliability; silicon-on-insulator; CMOS; ESD; HBM; SOI; Si-SiO2; human body model; CMOS integrated circuits; Electrostatic discharges; FETs; Integrated circuit reliability; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242883
