Title :
Fully-depleted SOI process optimization for 60 nm CMOS transistors
Author :
Fenouillet-Beranger, C. ; Fruleux, F. ; Talbot, A. ; Tosti, L. ; Palla, R. ; Casse, M. ; Carriere, N. ; Grouillet, A. ; Raynaud, C. ; Giffard, B. ; Skotnicki, T.
Author_Institution :
LETI, CEA, Grenoble, France
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we propose to study the main important technological parameters (Tsi, film doping and gate oxide influence) to give process orientations for 60nm gate lengths CMOS transistors optimization.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; niobium; semiconductor doping; semiconductor thin films; silicon; silicon-on-insulator; 60 nm; CMOS transistors; SOI; Si-SiO2; Si:Nb; film doping; gate oxide influence; optimization; CMOS integrated circuits; MOSFETs; Niobium; Semiconductor device doping; Semiconductor films; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242885
