Effect of photo-assisted RIE damage in GaN Schottky structures

Author

Mouffak, Z. ; Trombetta, L.

fYear

2001

fDate

2001

Firstpage

442

Lastpage

445

Abstract

The authors present a study on reactive ion etching- (RIE-) induced damage in GaN using simple Schottky structures and a BCl₃/Cl₂/N₂ gas mixture. They also perform a comparative investigation between RIE and photo-assisted RIE. Investigation of GaN surface composition using X-ray photoelectron spectroscopy (XPS) suggests that surface stoichiometry-related electrical and chemical surface damage is lower for PA-RIE when compared with RIE

Keywords

III-V semiconductors; X-ray photoelectron spectra; gallium compounds; photochemistry; sputter etching; stoichiometry; surface chemistry; surface composition; wide band gap semiconductors; BCl₃-Cl₂-N₂; BCl₃/Cl₂/N₂ gas mixture; GaN; I-V characteristics; PA-RIE; RIE-induced damage; Schottky diodes; Schottky structures; X-ray photoelectron spectroscopy; XPS; chemical surface damage; electrical surface damage; forward turn-on voltage; photo-assisted RIE; reactive ion etching; reverse breakdown voltage; surface composition; surface stoichiometry; Conducting materials; Etching; Gallium nitride; Gold; Plasma applications; Plasma devices; Plasma sources; Plasma temperature; Semiconductor materials; Windows;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984540

Filename

984540