Title :
Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD
Author :
Wong, P.S. ; Liang, B.L. ; Nuntawong, N. ; Tatebayashi, J. ; Huffaker, D.L. ; Dorogan, V.G. ; Mazur, Yu.I. ; Salamo, G.J.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
Abstract :
Power-, temperature-dependent, time-resolving, and micro-photoluminescence studies are performed to characterize patterned and self-assembled quantum dots (QDs) to understand the band structure. Carrier filling, relaxation, recombination and lifetime are different for these two QD growth modes.
Keywords :
MOCVD; band structure; carrier relaxation time; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum dots; MOCVD; band structure; carrier filling; carrier lifetime; carrier recombination; carrier relaxation; patterning; photoluminescence; quantum dots; self-assembly; MOCVD; Pattern analysis; Photoluminescence; Quantum dots; (160.2100) Electro-optical materials; (250.5230) Photoluminescence;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
