• DocumentCode
    2258461
  • Title

    High resistivity SOI substrates: how high should we go?

  • Author

    Lederer, D. ; Desrumeaux, C. ; Brunier, Franqois ; Raskin, J.P.

  • Author_Institution
    Microwave Lab., UCL, Louvain, Belgium
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    For planar RF structures made on oxidized High Resistivity (HR) Si substrates, it is fundamental to keep the resistivity near the SiO2/HR Si interface as high as possible. This paper presents a quantitative analysis of the influence of interface states at the SiO2/Si contact on the substrate resistivity. The starting materials for this study are raw HR substrates before or after SOI bonding process. These HR Si wafers were fabricated with either a Low (LIO) or a High Interstitial Oxygen (HIO) concentration.
  • Keywords
    coplanar waveguides; electrical resistivity; elemental semiconductors; interface states; interstitials; silicon-on-insulator; substrates; SiO2-Si; SiO2-Si contact; coplanar waveguides; high resistivity SOI substrates; interface states; interstitial O; planar RF structures; substrate resistivity; Conductivity; Coplanar waveguides; Interface phenomena; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242893
  • Filename
    1242893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258461