Title :
The G4-FET: low voltage to high voltage operation and performance
Author :
Dufrene, B. ; Akarvardar, K. ; Cristoloveanu, S. ; Blalock, B. ; Fechne, P. ; Mojarrad, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
We present the operational and performance of the 4-gate transistor (G4-FET) from the low voltage to the high voltage regime. Measured results show the complexity of threshold voltage, subthreshold swing, and breakdown voltage due to the multiple gate control utilized with the G4-FET. Devices fabricated in a 0.35 μm 3.3 V partially-depleted SOI process can achieve a breakdown voltage of 15 V, excellent subthreshold swing, and high mobility.
Keywords :
MOSFET; elemental semiconductors; semiconductor device breakdown; silicon-on-insulator; 0.35 micron; 15 V; 3.3 V; 4-gate transistor; G4-FET; SOI; Si-SiO2; breakdown voltage; subthreshold swing; threshold voltage; MOSFETs; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242895
