DocumentCode :
2258684
Title :
Proactive NBTI mitigation for busy functional units in out-of-order microprocessors
Author :
Li, Lin ; Zhang, Youtao ; Yang, Jun ; Zhao, Jianhua
Author_Institution :
Dept of ECE, Univ. of Pittsburgh, Pittsburgh, PA, USA
fYear :
2010
fDate :
8-12 March 2010
Firstpage :
411
Lastpage :
416
Abstract :
Due to fast technology scaling, negative bias temperature instability (NBTI) has become a major reliability concern in designing modern integrated circuits. In this paper, we present a simple and proactive NBTI recovery scheme targeting at critical and busy functional units with storage cells in modern microprocessors. Existing schemes have limitations when recovering these functional units. By exploiting the idle time of busy functional units at per-buffer-entry level, our scheme achieves on average 5.57x MTTF (Mean Time To Failure) improvement at the cost of <1% IPC degradation and <1% area overhead.
Keywords :
integrated circuit design; microprocessor chips; IPC degradation; MTTF; functional units; integrated circuit designing; mean time to failure; microprocessors; negative bias temperature instability; proactive NBTI mitigation; storage cells; Degradation; Integrated circuit reliability; MOSFETs; Microprocessors; Niobium compounds; Out of order; Stress; Threshold voltage; Timing; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location :
Dresden
ISSN :
1530-1591
Print_ISBN :
978-1-4244-7054-9
Type :
conf
DOI :
10.1109/DATE.2010.5457170
Filename :
5457170
Link To Document :
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