Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs

Author

Malm, B. Gunnar ; Östling, Mikael

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol. (KTH), Kista, Sweden

fYear

2001

fDate

2001

Firstpage

498

Lastpage

501

Abstract

Mixed mode circuit and device simulation has been used to investigated the linearity i.e. harmonic distortion for high-speed low voltage SiGe HBTs. Different Ge-profiles for reduced harmonic distortion have been discussed and compared to a conventional high-speed graded Ge-profile. Other RF figure-of-merits, such as maximum cut-off frequency and minimum noise figure have also been discussed. The influence of the Ge-profile on harmonic distortion was compared to the influence of different epitaxial collector doping profiles

Keywords

Ge-Si alloys; doping profiles; harmonic distortion; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; Ge-profile; RF harmonic distortion; SiGe; device simulation; epitaxial collector doping profiles; high-speed SiGe HBTs; high-speed graded Ge-profile; maximum cut-off frequency; minimum noise figure; mixed mode circuit; Circuit simulation; Cutoff frequency; Doping profiles; Germanium silicon alloys; Harmonic distortion; Linearity; Low voltage; Noise figure; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984555

Filename

984555