Title :
Peculiarities of the temperature behavior of SOI MOSFETs in the deep submicron area
Author :
Vancaillie, L. ; Kilchytska, V. ; Delatte, P. ; Demeus, L. ; Matsuhashi, H. ; Ichikawa, F. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, the temperature dependence of transistor fabricated in a thin film deep submicron SOI MOSFET fully depleted process, junction leakage current and transconductance were evaluated.
Keywords :
MOSFET; elemental semiconductors; leakage currents; silicon-on-insulator; thin films; Si; junction leakage current; thin film deep submicron SOI MOSFET; transconductance; Leakage currents; MOSFETs; Silicon on insulator technology; Thin films;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242906
