DocumentCode
2259294
Title
Design and fabrication of a novel power VJFET in 4H-SiC
Author
Zhao, J.H. ; Li, X. ; Tone, K. ; Alexandro, P. ; Pan, Meng-Shiuan ; Weine, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear
2001
fDate
2001
Firstpage
564
Lastpage
567
Abstract
Detailed processing technologies and the device structure for a planar normally-off VJFET blocking 2,510V is presented along with suggestions for scaling up the total current of this power VJFET
Keywords
field effect transistor switches; power field effect transistors; semiconductor technology; silicon compounds; 2510 V; 4H-SiC; SiC; SiC substrates; VJFET; unipolar power switch; vertical JFET; Artificial intelligence; Current density; Diodes; Electronics industry; Fabrication; Power electronics; Silicon carbide; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984580
Filename
984580
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