Title :
Laser processing of materials and devices
Author_Institution :
Coll. of Eng. & Technol., Old Dominion Univ., Newport News, VA, USA
Abstract :
Summary form only given. Laser processing of materials is widely used for fabrication of devices. The talk will describe the emerging applications of laser processing of materials in areas such as nanotechnology (carbon nanotubes and nanopatterning), micro-electro-mechanical-systems (MEMS), laser crystallization of Si for solar cells and displays, surface texturing, advanced lithography and surface modification. Lasers can provide unique material processing solutions. Laser-solid interactions will develop new fields of nanoscience and technology. Well-controlled nanostructures can be synthesized and manipulated by lasers for future nanodevices. Femtosecond lasers are an exciting new technology for materials processing and device fabrication as it is independent of the optical properties of the materials. We will describe some results obtained with the femtosecond laser to fabricate field emission and grating structures. The practical applications of lasers in the manufacturing process of microelectronic, optoelectronic and microsystems devices will be described
Keywords :
carbon nanotubes; crystallisation; laser materials processing; lithography; micromechanical devices; nanotechnology; solar cells; surface texture; C; MEMS; Si; advanced lithography; carbon nanotubes; displays; femtosecond lasers; field emission devices; grating structures; laser crystallization; laser processing; laser-solid interactions; material processing; micro-electro-mechanical-systems; nanopatterning; nanostructure synthesis; nanotechnology; solar cells; surface modification; surface texturing; Crystalline materials; Laser applications; Materials processing; Nanostructured materials; Optical device fabrication; Optical materials; Organic materials; Surface emitting lasers; Surface texture; Ultrafast optics;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984587