Title :
A computational model for chemical vapor deposition processes in industrial reactors
Author :
Krishnan, Anantha ; Zhou, Ning ; Przekwas, Andrzej
Author_Institution :
CFD Res. Corp., Huntsville, AL, USA
Abstract :
This article describes the development of a computational model for Chemical Vapor Deposition (CVD) in complex reactor configurations. The general features of the model include (i) comprehensive submodels for multi-component transport based on kinetic theory of gases, (ii) provision for arbitrary number of finite rate gas phase and surface reactions, and (iii) full coupling of the physical models with a general purpose, 2D/3D, steady/unsteady, multi-block Computational Fluid Dynamics (CFD) code based on non-orthogonal, Body-Fitted-Coordinates (BFC) formulation. The transport and chemistry models are validated against data for the deposition of silicon. Two- and three-dimensional simulations of industrial reactors are presented
Keywords :
chemical vapour deposition; chemically reactive flow; chemistry; flow simulation; kinetic theory of gases; thin films; Si; chemical vapor deposition; computational model; gas phase reactions; industrial reactors; kinetic theory; multi-component transport; nonorthogonal Body-Fitted-Coordinates formulation; silicon; steady/unsteady multi-block Computational Fluid Dynamics code; surface reactions; three-dimensional simulations; two-dimensional simulations; Chemical industry; Chemical vapor deposition; Computational fluid dynamics; Computational modeling; Computer industry; Gases; Geometry; Inductors; Kinetic theory; Solid modeling;
Conference_Titel :
Thermal Phenomena in Electronic Systems, 1994. I-THERM IV. Concurrent Engineering and Thermal Phenomena., InterSociety Conference on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-1372-0
DOI :
10.1109/ITHERM.1994.342893
