DocumentCode
2259715
Title
Geometrical analysis of two-transistor circuits with more than three operating points
Author
Claus, Martin
Author_Institution
Dept. of Electr. Eng. & Inf. Technol., Dresden Univ. of Technol., Germany
Volume
3
fYear
2005
fDate
28 Aug.-2 Sept. 2005
Abstract
This paper presents a new geometrical motivated approach to analyse resistive networks decomposable into two 3-pole subnetworks. Especially, networks composed of two MOSTs or BJTs that can have more than three operating points are analysed with this method. All results are verified additionally with a homotopy method realisable with standard circuit simulators.
Keywords
MOSFET; bipolar transistors; network analysis; poles and zeros; 3-pole subnetworks; MOST; bipolar junction transistor; homotopy method; operating points; resistive networks; two-transistor circuits; Circuit analysis; Circuit simulation; Electronic mail; Equations; History; Integrated circuit interconnections; Resistors; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN
0-7803-9066-0
Type
conf
DOI
10.1109/ECCTD.2005.1523057
Filename
1523057
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