Title :
A fully-on-chip wideband low noise amplifier for radio telescope applications
Author :
Le, Hai Phuong ; Shah, Kriyang ; Singh, Jugdutt
Author_Institution :
Centre for Technol. Infusion, La Trobe Univ., Melbourne, VIC, Australia
Abstract :
This paper presents the design and implementation of a fully on-chip wideband LNA using 0.25-micron silicon-on-sapphire (SOS) technology for the next-generation radio telescope application, the square kilometre array (SKA), which demands ultra low noise and wideband operation. The proposed LNA design employs a cascaded inductive degeneration architecture with intermediate LC architecture, resulting in a broadband input matching. The LNA is optimised for minimum noise figure (NF) by employing an external gate-source capacitor which is perfectly matched with a high quality factor (Q) inductors. After optimisation, the LNA achieved a NF from 0.56 dB to 0.67 dB over 1.1 GHz-band with a minimum gain of 14.9 dB at a 2.5-V power supply.
Keywords :
Q-factor; inductors; low noise amplifiers; optimisation; radiotelescopes; sapphire; silicon; wideband amplifiers; bandwidth 1.1 GHz; broadband input matching; cascaded inductive degeneration; external gate-source capacitor; noise figure 0.56 dB to 0.67 dB; optimisation; quality factor inductors; radio telescope applications; silicon-on-sapphire; size 0.25 micron; square kilometre array; voltage 2.5 V; wideband low noise amplifier; Broadband amplifiers; Capacitors; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Optical design; Radio astronomy; Space technology; Ultra wideband technology;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5118169