Scale-dependent optical near-fields in InAs quantum dots and their application to non-pixelated memory architecture

Author

Naruse, Makoto ; Nishibayashi, Kazuhiro ; Kawazoe, Tadashi ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Ohtsu, Motoichi

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We demonstrate scale-dependent near-field photoluminescence of InAs quantum dots. Our analysis, based on eigen-decomposition, leads to a novel non-pixelated memory architecture thanks to spectral diversity obtained at an optimal scale of optical near-fields.

Keywords

III-V semiconductors; eigenvalues and eigenfunctions; indium compounds; memory architecture; photoluminescence; semiconductor quantum dots; InAs; InAs quantum dots; eigen-decomposition; near-field photoluminescence; non-pixelated memory architecture; scale-dependent optical near-fields; spectral diversity; Gallium arsenide; Memory architecture; Nanophotonics; Optical buffering; Optical devices; Optical microscopy; Optical sensors; Photoluminescence; Probes; Quantum dots; (180.4243) Near-field microscopy; (200.3050) Information processing; (210.4680) Optical memories; (250.5590) Quantum-well, -wire and -dot devices; (999.9999) Nanophotonics;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572512