Lasing characteristics of vertical-cavity surface-emitting lasers based on GaAs and InGaAs quantum wells

Author

Derebezov, Ilya A. ; Haisler, V.A.

Author_Institution

Inst. of Semicond. Phys. SB RAS, Novosibirsk State Tech. Univ., Russia

fYear

2005

fDate

1-5 July 2005

Firstpage

30

Lastpage

31

Abstract

In this paper the authors reported on the results of an investigation of the lasing characteristics of vertical-cavity surface-emitting lasers (VCSEL´s) based on GaAs and InGaAs quantum wells (QW´s). The investigations of the laser mode structure have been carried out for VCSELs with apertures in the range from 1 μm up to 14 μm. The main lasing parameters such as the mode frequencies, the mode threshold gain as well as the parameters of the modal stability have been calculated using 3D rigorous eigenmode expansion model.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum wells; surface emitting lasers; 1 to 14 micron; 3D eigenmode expansion; InGaAs; lasing characteristics; modal stability; mode frequency; mode threshold gain; semiconductor quantum wells; vertical cavity surface emitting lasers; Apertures; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser theory; Quantum well lasers; Semiconductor lasers; Stability; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on

ISSN

1815-3712

Print_ISBN

5-7782-0491-4

Type

conf

DOI

10.1109/SIBEDM.2005.195572

Filename

1523177