Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates for device applications

Author

Ku, P.C. ; Buchheit, K. ; Chang-Hasnain, Connie J. ; Hernandez, Johann A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

137

Abstract

Summary from only given. We propose and demonstrate a novel buried oxide grating structure formed by selectively-oxidized AlGaAs layers grown on nonplanar substrates. The gratings provide a very wide stopband due to the large refractive index difference between the oxidized and non-oxidized AlGaAs. Potential applications include microcavity DFB lasers, tunable lasers, and various microstructure waveguide devices.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; micro-optics; microcavities; optical fabrication; oxidation; photodetectors; semiconductor quantum wells; AlGaAs; buried oxide grating structure; large refractive index difference; microcavity DFB lasers; microstructure waveguide devices; nonoxidized; nonplanar substrates; oxidized; selectively-oxidized layers; tunable lasers; wide stopband; Distributed Bragg reflectors; Distributed feedback devices; Gratings; Light emitting diodes; P-n junctions; Photonic band gap; Refractive index; Silicon; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033529

Filename

1033529