Title :
Electrical properties Bi24(BiCo)O40
Author :
Aplesnin, S.S. ; Sitnikov, M.N. ; Udod, L.V. ; Galyas, A.I. ; Nguyen, A.T.
Author_Institution :
M.F. Reshetneva Aircosmic Siberian State Univ., Krasnoyarsk, Russia
Abstract :
The crystal structure of the bismuth cobaltite Bi24(CoBi)O40 is determined. The resistivity and thermoelectromotive force measurement in the temperature range of 80-1000 K is performed. The temperature hysteresis of resistivity below the temperature T = 950 K is revealed. The crossover from semiconductor to metallic behavior of thermoelectromotive force versus temperature is found at high temperatures.
Keywords :
bismuth compounds; crystal structure; electric potential; electrical resistivity; metal-insulator transition; semiconductor materials; thermoelectricity; Bi24(BiCo)O40; bismuth cobaltite; crystal structure; electrical properties; resistivity; semiconductor-metallic crossover; temperature 80 K to 1000 K; temperature hysteresis; thermoelectromotive force; Bismuth; Conductivity; Crystals; Force; Temperature distribution; Temperature measurement; activation energy; electrical resistivity; thermoelectromotive force;
Conference_Titel :
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4577-1069-8
DOI :
10.1109/SIBCON.2011.6072654
