Title :
Energy and ultra-pure water consumption saving by the room temperature cleaning
Author :
Matsuo, Hiroshi ; Higuchi, Tatsuro ; Miyazaki, Koji
fDate :
30 Sept.-2 Oct. 2003
Abstract :
Energy-saving effect of a room temperature wet cleaning method using ozonated ultra-pure water is estimated in semiconductor manufacturing process. We can save 68% of electric energy and 33% of ultra-pure water consumption for each cleaning process in comparison with a conventional RCA cleaning. Total energy-saving effect using the room temperature cleaning method in front-end processes is 44% of electric and UPW generation energy. Electrical characteristics of gate oxide which is precleaned by using the room temperature wet cleaning method are equivalent for those by the conventional RCA cleaning.
Keywords :
cleaning; electronics industry; power consumption; semiconductor device manufacture; water conservation; water treatment; 293 to 298 K; H2O; UPW generation energy; electric energy; electrical properties; energy-saving; gate oxide; room temperature; semiconductor manufacturing; ultra pure water consumption; wet cleaning; Chemicals; Cities and towns; Cleaning; Electric variables; Electric variables measurement; Energy consumption; Manufacturing processes; Power measurement; Temperature; Ultrasonic variables measurement;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243219