DocumentCode
2265028
Title
The control of channeling phenomenon
Author
Shibata, Takuma ; Hashimoto, Hiroya ; Hirakawa, Tsubasa ; Tonari, Kazuhiko
Author_Institution
HALCA project, Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
161
Lastpage
164
Abstract
A dependence of a depth profile on a tilt and twist angle was investigated with a resolution of 0.05 deg. using a stencil mask ion implanter which has less than 0.1 deg. parallelism of ion beam. Our experimental results show channeling phenomenon can be controlled using with highly controlled parallel ion beam. It means that if we control the tilt angle with in the resolution of less than 0.1 deg., we can neglect the fluctuation caused by channeling phenomenon.
Keywords
channelling; energy loss of particles; ion implantation; secondary ion mass spectra; Si; channeling; parallel ion beam; stencil mask ion implanter; tilt angle; twist angle; Acceleration; Boron; Fluctuations; Ion beams; Ion implantation; Manufacturing processes; Monitoring; Reproducibility of results; Saturation magnetization; Shadow mapping;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243255
Filename
1243255
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