Design of class-DE amplifier with linear and nonlinear shunt capacitances for 25 % duty ratio

Author

Sekiya, Hiroo ; Miyahara, Ryosuke ; Kazimierczuk, Marian K.

Author_Institution

Grad. Sch. of Adv. Integration Sci., Chiba Univ., Chiba, Japan

fYear

2009

fDate

24-27 May 2009

Firstpage

2870

Lastpage

2873

Abstract

The class-E ZVS/ZDS operation within the class-DE amplifier can be easily achieved by adding external shunt capacitances. This paper presents the analytical expressions for the design of the class-DE amplifier with the shunt capacitances composed of the linear and nonlinear capacitances for the switch-on duty ratio D=0.25. In the analysis, an equivalent linear shunt capacitance of nonlinear MOSFET output capacitance are defined and derived. The analytical results show good agreement with the experimental ones, which validates our analysis.

Keywords

capacitance; power MOSFET; power amplifiers; zero voltage switching; class-DE power amplifier; class-E zero-derivative switching operation; class-E zero-voltage switching operation; equivalent linear shunt capacitance; nonlinear MOSFET output capacitance; Circuit topology; Frequency; High power amplifiers; MOSFET circuits; Operational amplifiers; Parasitic capacitance; Shunt (electrical); Switches; Switching circuits; Zero voltage switching; class-DE power amplifier; class-E ZVS/ZDS; equivalent linear capacitance; nonlinear MOSFET output capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on

Conference_Location

Taipei

Print_ISBN

978-1-4244-3827-3

Electronic_ISBN

978-1-4244-3828-0

Type

conf

DOI

10.1109/ISCAS.2009.5118401

Filename

5118401