A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance

Author

Thrivikraman, Tushar K. ; Appaswamy, Aravind ; Phillips, Stanley D. ; Sutton, Akil K. ; Wilcox, Edward P. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., N.W. Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

79

Lastpage

82

Abstract

We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two devices shared. The device was fabricated in both first and third-generation, commercially-available SiGe HBT technologies. The third-generation IMC device was measured to have over 20 dB of current gain and over 30 dB of power gain at 10 GHz. In addition, the measured total dose radiation response and simulated current transients are presented. These results demonstrate the potential use of these devices in high-speed circuits intended for operation in space or other extreme environments.

Keywords

BiCMOS integrated circuits; bipolar transistor circuits; germanium; heterojunction bipolar transistors; radiation effects; silicon compounds; BiCMOS integrated circuit; SiGe; bipolar transistor circuit; cascoded inverse-mode HBT; current transient; device structure; heavy ion irradiation; high-speed circuit; radiation effects; radiation tolerance; shared-subcollector; subcollector region; third-generation IMC device; Circuits; Current measurement; Degradation; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Radiation effects; Silicon germanium; Single event upset; Space technology; Bipolar transistor circuits; Radiation effects; Semiconductor devices; SiGe BiCMOS integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314139

Filename

5314139