• DocumentCode
    2265191
  • Title

    Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity

  • Author

    Peng, Y.H. ; Chen, C.C. ; Kuan, C.H. ; Cheng, H.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2002
  • fDate
    24-24 May 2002
  • Firstpage
    205
  • Abstract
    Summary from only given. Our Ge quantum dot IR photodetector (QDIP) shows a satisfactory detectivity. The responsivity is active in the 2 - 10 /spl mu/m under low biases and can be extended up to 20/spl mu/m under high biases.
  • Keywords
    germanium; infrared detectors; semiconductor quantum dots; 2 to 10 micron; 20 micron; Ge; Ge quantum dot IR photodetector; Ge quantum dots; high detectivity; low biases; responsivity; thick Si blocking layers; Amplitude modulation; Bandwidth; Dark current; Electron optics; Frequency modulation; Optical modulation; Optical pulse generation; Photoconductivity; Quantum dots; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-706-7
  • Type

    conf

  • DOI
    10.1109/CLEO.2002.1033622
  • Filename
    1033622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2265191