Title :
Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity
Author :
Peng, Y.H. ; Chen, C.C. ; Kuan, C.H. ; Cheng, H.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary from only given. Our Ge quantum dot IR photodetector (QDIP) shows a satisfactory detectivity. The responsivity is active in the 2 - 10 /spl mu/m under low biases and can be extended up to 20/spl mu/m under high biases.
Keywords :
germanium; infrared detectors; semiconductor quantum dots; 2 to 10 micron; 20 micron; Ge; Ge quantum dot IR photodetector; Ge quantum dots; high detectivity; low biases; responsivity; thick Si blocking layers; Amplitude modulation; Bandwidth; Dark current; Electron optics; Frequency modulation; Optical modulation; Optical pulse generation; Photoconductivity; Quantum dots; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033622
