DocumentCode :
2265260
Title :
Low-power K-band pseudo-stacked mixer with linearity enhancement technique
Author :
Shiramizu, Nobuhiro ; Masuda, Toru ; Nakamura, Takahiro ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
59
Lastpage :
62
Abstract :
A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover, an emitter degeneration inductor of the receiver mixer improves the linearity characteristics. The proposed mixers are fabricated using 0.18-mum SiGe BiCMOS technology. The transmitter mixer achieves a conversion gain of -0.1 dB, input P1dB of -11 dBm, and IIP3 of -1.2 dBm. The receiver mixer achieves a conversion gain of 11.2 dB, input P1dB of -23 dBm, and IIP3 of -13 dBm. These results indicate that these mixer design techniques are suitable to be applied for low-power transceivers within the quasi-millimeter-wave frequency region.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; capacitors; low-power electronics; mixers (circuits); transceivers; SiGe BiCMOS technology; capacitor; emitter degeneration inductor; gain -0.1 dB; gain -1.2 dB; gain -11 dB; gain -13 dB; gain -23 dB; gain 11.2 dB; linearity enhancement; low-power K-band pseudo-stacked mixer; low-power transceivers; low-power transmitter mixer; on-chip transformer; pseudo-stacked configuration; quasimillimeter-wave frequency region; receiver mixer; voltage 1.5 V; Capacitors; Frequency; Gain; Inductors; K-band; Linearity; Low voltage; Mixers; Resistors; Transmitters; Mixer; high linearity; low power; low voltage; on-chip transformer; quasi-millimeter-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
ISSN :
1088-9299
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2009.5314143
Filename :
5314143
Link To Document :
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