DocumentCode
2265396
Title
SGMOS: a student-oriented program for the microcomputer simulation of submicron-geometry MOSFETs
Author
Goel, Ashok K.
Author_Institution
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
fYear
1993
fDate
16-18 Aug 1993
Firstpage
991
Abstract
In order to enable students to simulate submicron-geometry MOSFETs, we have developed a student-oriented and microcomputer-efficient program called SGMOS which can be used to study the short channel, the narrow width, the inverse narrow width and the velocity saturation effects arising from the miniaturization of the MOSFETs
Keywords
MOSFET; computer aided instruction; digital simulation; electronic engineering education; microcomputer applications; semiconductor device models; SGMOS; inverse narrow width; microcomputer simulation; narrow width; short channel; student-oriented program; submicron-geometry MOSFETs; velocity saturation effects; FETs; Geometry; Laboratories; MOSFETs; Microcomputers; Microelectronics; Predictive models; Solid modeling; Threshold voltage; Workstations;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
Conference_Location
Detroit, MI
Print_ISBN
0-7803-1760-2
Type
conf
DOI
10.1109/MWSCAS.1993.343237
Filename
343237
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