Title :
Electrical characteristics of non-visual defects detected by E-beam inspection
Author :
Miura, Amane ; Ikota, M. ; Miyano, Hiroyoshi ; Zhaohui Cheng ; Sugimoto, Akihiro
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
VC defects detected by e-beam inspection were analyzed in detail. Dark defects were fatal and the root causes easily identifiable. Bright defects were not always fatal and were hard to identify. The electrical characteristics of such defects were measured by electrical probe and small leak currents were observed. These leak levels depend on the voltage applied. We optimized the e-beam inspection condition so that the wafer surface voltage could be the same as the device operating voltage. As a result, it could detect defects that caused electrical failures efficiently.
Keywords :
CMOS integrated circuits; DRAM chips; electron beam testing; failure analysis; inspection; integrated circuit modelling; integrated circuit testing; leakage currents; VC defects; bright defects; dark defects; e-beam inspection; electrical failures; electrical probe; electrical properties; leak currents; leak levels; nonvisual defects; root causes; wafer surface voltage; Adhesives; CMOS process; Contacts; Electric variables; Electric variables measurement; Inspection; Leak detection; Probes; Virtual colonoscopy; Voltage;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243279
