A novel photo BJT array for intelligent imaging

Author

Liang, Guangxia ; Miller, W.C.

Author_Institution

Dept. of Electr. Eng., Windsor Univ., Ont., Canada

fYear

1993

fDate

16-18 Aug 1993

Firstpage

1056

Abstract

A novel image system chip containing a Field-Effect Modified (FEM) photo BJT array with charge amplification, self-noise and C_bc reduction capabilities was designed and fabricated in a standard 1.2 μm CMOS process. The chip fulfils the requirements of the random access and repetitive reading operation for the intelligent image scanning. The dynamic range of linearity of the photo BJT is dramatically improved by using capacitor-loaded emitter follower configuration and sampling operation in a deep forward biasing condition. The fixed pattern noise (FPN) and the random noise are reduced by the introduction of both the base reset and the emitter reset

Keywords

CMOS analogue integrated circuits; analogue processing circuits; bipolar transistors; image processing; image scanners; image sensors; integrated circuit noise; phototransistors; 1.2 micron; CMOS process; base reset; capacitor-loaded emitter follower configuration; charge amplification; deep forward biasing condition; dynamic range; emitter reset; field-effect modified BJT array; fixed pattern noise; image system chip; intelligent image scanning; intelligent imaging; photo BJT array; random access operation; random noise; repetitive reading operation; sampling operation; self-noise reduction capability; CMOS process; Charge coupled devices; Diodes; Dynamic range; Image sampling; Image storage; Linearity; Noise reduction; Optical imaging; Optical noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on

Conference_Location

Detroit, MI

Print_ISBN

0-7803-1760-2

Type

conf

DOI

10.1109/MWSCAS.1993.343265

Filename

343265