Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Author

Decoutere, S. ; Van Huylenbroeck, S. ; Heinemann, B. ; Fox, A. ; Chevalier, P. ; Chantre, A. ; Meister, T.F. ; Aufinger, K. ; Schröter, M.

Author_Institution

IMEC vzw, Leuven, Belgium

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

9

Lastpage

16

Abstract

The European project DOTFIVE addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz F_max and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the project to overcome these limitations will be summarized. Initial results indicate that the objectives of the project can be reached.

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; millimetre wave devices; scaling circuits; semiconductor materials; DOTFIVE addresses; European project; HBT; SiGe:C; advanced process modules; evolutionary scaling; frequency 500 GHz; gate delay; half-terahertz; self-aligned selective epitaxial; time 2.5 ps; BiCMOS integrated circuits; Bipolar transistors; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave technology; Production; Radar applications; Semiconductor process modeling; Silicon germanium; BiCMOS process technology; Microwave technology; Millimeter-wave technology; Silicon-Germanium bipolar transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314214

Filename

5314214