Title :
A 122 GHz receiver in SiGe technology
Author :
Schmalz, K. ; Winkler, W. ; Borngräber, J. ; Debski, W. ; Heinemann, B. ; Scheytt, C.
Author_Institution :
IHP GmbH, Frankfurt (Oder), Germany
Abstract :
A 122 GHz subharmonic receiver for imaging and sensing applications has been realized, which consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. It is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255 GHz/315 GHz. The down-conversion gain of the receiver is 25 dB at 127 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 125 GHz to 129 GHz. The input 1-dB compression point is at -40 dBm. The receiver consumes 139 mA at a supply voltage of 3.3 V.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; carbon; detector circuits; microwave detectors; microwave imaging; radio receivers; semiconductor materials; BiCMOS technology; SiGe:C; bandwidth 125 GHz to 129 GHz; current 139 mA; frequency 122 GHz; imaging application; polyphase filter; push-push VCO; sensing application; single ended LNA; subharmonic mixer; subharmonic receiver; voltage 3.3 V; BiCMOS integrated circuits; Filters; Frequency conversion; Gain; Germanium silicon alloys; Noise figure; Radio frequency; Signal generators; Silicon germanium; Voltage-controlled oscillators; 122 GHz; LNA; SiGe technology; VCO; millimeter-wave circuits; sub-harmonic mixer;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314246
