Long wavelength GaInNAs(Sb) lasers on GaAs

Author

Ha, W. ; Gambin, V. ; Bank, Seth ; Wistey, M. ; Harris, J.S. ; Seongsin Kim

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

269

Abstract

Summary from only given. We present a new structure utilizing antimony, either incorporated into the crystal or used as a surfactant, to enable higher nitrogen and indium incorporation. This results in a shift of the post-annealed emission to longer wavelengths. The material for this study was grown by MBE with an RF plasma source. GaNAsSb barriers can also reduce the overall strain of the active region GaInNAsSb quantum wells and GaNAsSb barriers because the high In mole fraction QWs are compressively strained and the GaNAs barriers are tensile strained.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; GaInNAsSb; GaInNAsSb quantum wells; GaNAs; GaNAs barriers; GaNAsSb; GaNAsSb barriers; MBE; QW photoluminescence; RF plasma source; active region; antimony; blue-shift; emission spectrum; high In mole fraction quantum wells; indium incorporation; long wavelength lasers; overall strain; post-annealed emission; quantum well lasers; quantum wells; surfactant; tensile strained; Electrons; Gallium arsenide; Indium gallium arsenide; Laser modes; Loss measurement; Pump lasers; Solid lasers; Temperature dependence; Temperature measurement; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033934

Filename

1033934