Title :
A high-drive low-power BiCMOS buffer using compound PMOS/NPN transistors
Author :
Furth, Paul M. ; Andreou, Andreas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
In this paper we present a high-drive low-power BiCMOS buffer amplifier implemented in a 2 μm technology. The class-AB output stage incorporates stacked NPN and compound PMOS/NPN transistors in which the PMOS transistors operate below threshold. Quiescent current is 300μA using a ±2.5V supply. Total area is 0.165 mm2
Keywords :
BiCMOS analogue integrated circuits; buffer circuits; differential amplifiers; -2.5 V; 2 micron; 2.5 V; 300 muA; BiCMOS buffer; buffer amplifier; class-AB output stage; compound PMOS/NPN transistors; high-drive low-power buffer; BiCMOS integrated circuits; CMOS technology; Capacitance; Fabrication; Frequency; High power amplifiers; MOSFETs; Signal processing; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
Conference_Location :
Detroit, MI
Print_ISBN :
0-7803-1760-2
DOI :
10.1109/MWSCAS.1993.343360
